Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such device
US6177312A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 26, 1998 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Mar 26, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of said device, wherein at least some of the contaminate nitrogen has formed a bond with the surface of the silicon substrate in contact with the gate oxide layer in said gate region, said method comprising: contacting said gate oxide layer and contaminate nitrogen with a gas comprising ozone at a temperature of about 850.degree. C. to about 950.degree. C. for an effective period of time to break said bond; and removing said gate oxide layer and contaminate nitrogen from said surface of said silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.