Manufacturing method capable of preventing corrosion of metal oxide semiconductor
US6177334A · kind A · utility
12Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1998 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Dec 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method is capable of preventing corrosion of a metal oxide semiconductor. The manufacturing method sequentially forms a polysilicon layer, a silicide layer and a top cap layer over a substrate, and then etching to form a gate structure. Next, a rapid thermal process is carried out to form an oxide layer over the exposed sidewalls of the silicide layer. Finally, the substrate is cleaned, and then of a source/drain region having a lightly doped drain structure is formed on each side of the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.