Correction of pattern-dependent errors in a particle beam lithography system
US6177680A · kind A · utility
12Cited by
3References
12Claims
0Family size
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Key dates
| Filing date | Nov 20, 1998 |
| Grant date | Jan 23, 2001 |
| Priority date | — |
| Expiry date | Nov 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An e-beam system for making masks corrects the beam for pattern-dependent errors by executing the bulk of the post-processing program only once, with two sets of output data being generated by the encode routine. A first output file of the encode routine generates the beam control data without pattern-dependent corrections. A second output file merges the beam control data with the data for metrology marks. A test wafer is patterned using the second output file and measured to generate a set of pattern correction data. Production wafers are written using the beam control data corrected on the fly by the pattern correction data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.