Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors
US6179910A · kind A · utility
3Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1999 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Sep 14, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.