Toshiaki Saishoji
10Patents
4h-index
26Co-inventors
56Inventor score
Filing activity: Jul 9, 1996 → May 31, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7141113B1 | Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer | Chemistry; Metallurgy | 11 | Expired |
| US6869478B2 | Method for producing silicon single crystal having no flaw | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5824152A | Semiconductor single-crystal pulling apparatus | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6977010B2 | Apparatus for pulling single crystal by CZ method | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6042646A | Simple method for detecting temperature distributions in single crystals and method for manufacturing silicon single crystals by employing the simple method | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6179910A | Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors | Chemistry; Metallurgy | 3 | Expired |
| US6056931A | Silicon wafer for hydrogen heat treatment and method for manufacturing the same | Chemistry; Metallurgy | 2 | Expired |
| US6273944A | Silicon wafer for hydrogen heat treatment and method for manufacturing the same | Chemistry; Metallurgy | 2 | Expired |
| US5948159A | Method of controlling defects of a silicon single crystal | Chemistry; Metallurgy | 2 | Expired |
| US7727334B2 | Apparatus for pulling single crystal by CZ method | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.