Polishing pad and process for forming same
US6179950A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1999 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Feb 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/213
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A process for joining together a first polishing pad with a second polishing pad to form a larger pad for a machine that performs chemical-mechanical polishing of silicon wafers. The process includes laying a first polishing pad on a surface and laying a second pad on the surface so that a portion of the second pad overlies a portion of the first pad, creating an overlap region. The first and second pads in the overlap region are cut through to form a first cut edge on the first pad and a second cut edge on the second pad, the first and second cut edges having shapes which are complementary. The first and second cut edges are brought into engagement, and the first pad is joined to the second pad at the first and second cut edges. Cutting is done in a first direction that is generally opposite to a second direction that a polishing fluid is expected to move on an surface of the pad during operation of the polishing machine, thereby sloping the first and second cut edges away from the second direction to inhibit passage of polishing fluid between the first and second cut edges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.