Metal oxide semiconductor device with localized laterally doped channel
US6180464A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1998 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Nov 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Channel doping is implemented such that dopants remain localized under the gate without migrating under the source/drain juctions during processing, thereby avoiding performance degradation of the finished device. Embodiments include implanting impurities at an acute angle to form a lateral channel implant localized below the gate after activation of source/drain regions, and activating the lateral channel implant by a low-temperature RTA during subsequent metal silicide formation. The use of a low-temperature RTA for electrical activation of the lateral channel implant avoids impurity migration under the source/drain junctions, thereby lowering parasitic junction capacitance and enabling the manufacture of semiconductor devices exhibiting higher circuit speeds with improved threshold voltage control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.