Method for forming a high-permittivity dielectric film use in a semiconductor device
US6180542A · kind A · utility
16Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 12, 1999 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Oct 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a tantalum oxynitride film which is used as a high-permittivity dielectric film of a semiconductor device. In the method of the present invention, a tantalum-containing film is first formed on a semiconductor substrate, and then the tantalum-containing film is converted into a tantalum oxynitride film using a heat treatment or a plasma treatment in a reactive gas. According to the method of the present invention, the tantalum oxynitride film can be easily formed using process conditions established in prior art processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.