Method of generating two nitrogen concentration peak profiles in gate oxide
US6180543A · kind A · utility
15Cited by
9References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1999 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Jul 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method is provided for introducing nitrogen concentrations into oxide layers. The first embodiment of the invention teaches a NO/N.sub.2 O pre-oxidation anneal followed by a re-oxidation followed by a NO/N.sub.2 O/NH.sub.3 anneal. The second embodiment of the invention teaches the formation of a layer of sacrificial oxide, followed by a nitrogen implantation followed by the removal of the sacrificial oxide followed by the gate oxide formation followed by a NO/N.sub.2 O/NH.sub.3 anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.