Mo Yu
44Patents
16h-index
43Co-inventors
81Inventor score
Filing activity: Apr 1, 1999 → Dec 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6225167A | Method of generating multiple oxide thicknesses by one oxidation step using NH3 nitridation followed by re-oxidation | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6362085B1 | Method for reducing gate oxide effective thickness and leakage current | Electricity | 34 | Expired |
| US6171911A | Method for forming dual gate oxides on integrated circuits with advanced logic devices | Electricity | 34 | Expired |
| US6204205A | Using H2anneal to improve the electrical characteristics of gate oxide | Electricity | 30 | Expired |
| US6624090B1 | Method of forming plasma nitrided gate dielectric layers | Electricity | 29 | Expired |
| US6380104B1 | Method for forming composite gate dielectric layer equivalent to silicon oxide gate dielectric layer | Electricity | 29 | Expired |
| US6319784A | Using high temperature H2 anneal to recrystallize S/D and remove native oxide simultaneously | Electricity | 28 | Expired |
| US6110780A | Using NO or N.sub.2 O treatment to generate different oxide thicknesses in one oxidation step for single poly non-volatile memory | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6566205B1 | Method to neutralize fixed charges in high K dielectric | Electricity | 19 | Expired |
| US6767847B1 | Method of forming a silicon nitride-silicon dioxide gate stack | Electricity | 19 | Expired |
| US6759302B1 | Method of generating multiple oxides by plasma nitridation on oxide | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6818553B1 | Etching process for high-k gate dielectrics | Electricity | 18 | Expired |
| US6323143A | Method for making silicon nitride-oxide ultra-thin gate insulating layers for submicrometer field effect transistors | Electricity | 17 | Expired |
| US6184155A | Method for forming a ultra-thin gate insulator layer | Electricity | 17 | Expired |
| US7118974B2 | Method of generating multiple oxides by plasma nitridation on oxide | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6573193B2 | Ozone-enhanced oxidation for high-k dielectric semiconductor devices | Electricity | 16 | Expired |
| US6689665B1 | Method of forming an STI feature while avoiding or reducing divot formation | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6180543A | Method of generating two nitrogen concentration peak profiles in gate oxide | Electricity | 15 | Expired |
| US6465323B1 | Method for forming semiconductor integrated circuit microelectronic fabrication having multiple gate dielectric layers with multiple thicknesses | Electricity | 13 | Expired |
| US6511887B1 | Method for making FET gate oxides with different thicknesses using a thin silicon nitride layer and a single oxidation step | Electricity | 12 | Expired |
| US6825133B2 | Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer | Electricity | 12 | Expired |
| US6495422B1 | Methods of forming high-k gate dielectrics and I/O gate oxides for advanced logic application | Electricity | 11 | Expired |
| US7138317B2 | Method of generating multiple oxides by plasma nitridation on oxide | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6232241A | Pre-oxidation cleaning method for reducing leakage current of ultra-thin gate oxide | Electricity | 6 | Expired |
| US6649535B1 | Method for ultra-thin gate oxide growth | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.