Static induction semiconductor device, and driving method and drive circuit thereof
US6180959A · kind A · utility
10Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1998 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Apr 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/202
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a silicon carbide static induction transistor, at a surface part of a semiconductor substrate, a p-type gate region is formed partially overlapping a n-type source region, whereby the high accuracy in alignment between the gate region and the source region is not required, and the gate withstand voltage can be highly increased since the substrate is made of silicon carbide, which improves the yield of static induction transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.