CMOS image sensor with equivalent potential diode
US6180969A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1999 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Feb 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
Abstract
A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active region; a N.sup.- region formed within the P-epi layer, wherein the first impurity region is apart from the isolation layer; and a P.sup.0 region of the conductive type formed beneath a surface of the P-epi layer and on the N.sup.- region, wherein a width of the P.sup.0 region is wider than that of the N.sup.- region so that a portion of the P.sup.0 region is formed on the P-epi layer, whereby the P.sup.0 region has the same potential as the P-epi layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.