Semiconductor storage device
US6181620A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2000 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Jan 18, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4094
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor storage device of this invention includes memory cells each having two transistors and one storage capacitor. Each memory cell is connected with a first word line and a first bit line for a first port and a second word line and a second bit line for a second port. The first and second bit lines are alternately disposed in an open bit line configuration. In the operation of the semiconductor storage device, in a period when a first precharge signal for precharging each first bit line or a first sense amplifier activating signal for activating a first sense amplifier is kept in an active state, a second precharge signal for precharging each second bit line and a second sense amplifier activating signal for activating a second sense amplifier are both placed in an inactive state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.