Method of detecting end point of polishing of wafer and apparatus for detecting end point of polishing
US6183656A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2000 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Mar 6, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/8404
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of detecting an end point of polishing arranged to perform CMP polishing with which an insulating layer of a wafer incorporating a substrate having a metal-containing permalloy layer formed thereon and the insulating layer formed on the metal-containing permalloy layer is chemimechanically polished to expose the flat permalloy layer, the method of detecting an end point of polishing, having the steps of: collecting abrasive material slurry on a surface plate for polishing as a continuous flow from the start or during CMP polishing; continuously mixing a color developing reagent with the collected continuous flow to prepare a specimen for the continuos flow; reading the color of the specimen as a digital value (Ii) by a color identifying sensor; and determining a moment of time at which the digital value (Ii) reaches a digital value (Io) of a specimen of a waste flow of the abrasive material slurry at the end of polishing to be the end of CMP polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.