Method for processing a poly defect
US6183819A · kind A · utility
0Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 1999 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Feb 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a poly defect is described. A substrate is provided, and a first oxide layer is formed on the substrate. A polysilicon layer is formed on the first oxide layer, and a poly defect is formed on the polysilicon layer surface simultaneous with polysilicon layer formation. A second oxide layer is formed conformal to the substrate, a portion of the second oxide layer and the poly defect are removed by polishing until a thin second oxide layer and a thin poly defect layer are formed. Finally, the thin second oxide layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.