Method for fabricating compound semiconductor epitaxial wafer and vapor phase growth apparatus using the same
US6184049A · kind A · utility
4Cited by
1References
5Claims
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Key dates
| Filing date | Aug 5, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Aug 5, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a compound semiconductor epitaxial wafer having a uniform epitaxial layer-thickness distribution independently of positions of compound semiconductor wafers placed within a reaction furnace (19), and a vapor phase growth apparatus for implementing the method. A group III source gas (13) is flowed from a gas inlet (14) of the reaction furnace (19) to a gas outlet (16) thereof, whereas a group V source gas (15) is supplied as dispersedly from a plurality of groups of gas discharge ports (18a, 18b, 18c) provided in a flow direction of the group III source gas (13).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.