Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS
US6184074A · kind A · utility
23Cited by
9References
23Claims
0Family size
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Key dates
| Filing date | Dec 15, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The capacitor (12) comprises a HDC dielectric (40) and upper (44) and lower (32-36) electrodes. The lower electrode comprises a polysilicon base (32), a diffusion barrier (34) on the sidewalls of the polysilicon base (32) and an oxygen stable material (36) on the sidewalls adjacent the diffusion barrier (34) and separated from the polysilicon base (32) sidewalls by the diffusion barrier (34). The oxygen stable material (36) is formed on the sidewalls by a deposition and either etchback or CMP process rather than by a patterned etch. The HDC dielectric (40) is then formed adjacent the oxygen stable material (36).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.