Capacitor trench-top dielectric for self-aligned device isolation

US6184107A · kind A · utility

Assignees

• International Business Machines Corporation · US
• Siemens Microelectronics, Inc. · US

Inventors

• Rama Divakaruni · Ossining, US
• Ulrike Gruening · Wappingers Falls, US
• Byeong Y. Kim · Lagrangeville, US
• Jack A. Mandelman · Stormville, US
• Larry Nesbit · Farmington, US
• Carl Radens · Lagrangeville, US

Key dates

• Filing date: Mar 17, 1999
• Grant date: Feb 6, 2001
• Expiry date: Mar 17, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/0383

Abstract

A semiconductor device including a substrate. At least one pair of deep trenches is arranged in the substrate. A collar lines at least a portion of a wall of each deep trench. A deep trench fill fills each deep trench. A buried strap extends completely across each deep trench over each deep trench fill and each collar. An isolation region is arranged between the deep trenches. A dielectric region overlies each buried strap in each deep trench.