Inductively coupled plasma CVD
US6184158A · kind A · utility
120Cited by
67References
60Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1996 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Dec 23, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.