Patent · US Expired

Field effect-controlled semiconductor component

US6184555A · kind A · utility

273Cited by

6References

3Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Jeno Tihanyi · Tauberbischofsheim, DE
Helmut Strack · Hersbruck, DE
Heinrich Geiger · Holzkirchen, DE

Key dates

Filing date	Dec 4, 1998
Grant date	Feb 6, 2001
Priority date	—
Expiry date	Dec 4, 2018

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/111
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a field effect-controllable semiconductor component of vertical or lateral design i.e. MOSFETs and IGBTs. In this case, depletion zones and complementary depletion zones of opposite conduction types are introduced in the source-drain load path, in the semiconductor body, i.e. in the inner zone in the case of vertical components and in the drift zone in the case of lateral components, the concentration of the regions doped by the first conduction type corresponding approximately to the concentration of the regions doped by the second conduction type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.