Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices
US6184572A · kind A · utility
30Cited by
9References
4Claims
0Family size
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Key dates
| Filing date | Apr 29, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Apr 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layers are composed of a silicon carbide material containing hydrogen. The dielectric stack is subjected to rigorous adhesion and thermal testing. A single continuous process for depositing the dielectric stack in a high density plasma reactor is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.