Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure
US6185077A · kind A · utility
165Cited by
10References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 6, 1999 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Jan 6, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A stable pinned structure for a magnetoresistive sensor includes a pair of ferromagnetic layers sandwiched about an antiferromagnetic layer, the ferromagnetic layers having substantially opposite magnetic directions magnetostatically coupled and pinned by the antiferromagnetic layer. A free layer of ferromagnetic material has a magnetic direction that can rotate in the presence of an applied magnetic field so that the field can be sensed. A second free layer may be provided, such that the free layers are sandwiched about the pinned structure, with the sensor configured for amplifying signals and minimizing common mode noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.