Semiconductor laser having electro-static discharge protection
US6185240A · kind A · utility
26Cited by
9References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Jan 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical cavity surface emitting laser (103) and a diode (105) is provided. The diode (105) is electrically coupled in reverse parallel to the vertical cavity surface emitting laser (103), thereby providing a portion of protection against electro-static discharge damage to the vertical cavity surface emitting laser (103).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.