Plasma treatment method and manufacturing method of semiconductor device
US6186153A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1998 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Mar 18, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Providing a dry cleaning method capable of removing deposition films which adhere to the inner walls of a semiconductor manufacturing apparatus-that is, removing dust production sources therefrom. To this end, the dry cleaning process is supplemented by a step of removing either ion sputtered matter or products of the internal member materials of the apparatus or chemical compounds of such apparatus internal member materials and of an etching gas, in addition to a step of removing etching reaction products. It thus becomes possible to eliminate dust generation due to pealing off of deposition films with an increase in the number of wafers being processed, which in turn increases the manufacturing yield and working efficiency of the manufacturing apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.