Kazuo Nojiri
37Patents
14h-index
85Co-inventors
84Inventor score
Filing activity: Feb 9, 1990 → Jun 3, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5007981A | Method of removing residual corrosive compounds by plasma etching followed by washing | Electricity | 91 | Expired |
| US5868854A | Method and apparatus for processing samples | Electricity | 53 | Expired |
| US5734188A | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same | Electricity | 37 | Expired |
| US5661061A | Process for fabricating a semiconductor integrated circuit device having the multi-layered fin structure | Electricity | 32 | Expired |
| US6451665B1 | Method of manufacturing a semiconductor integrated circuit | Electricity | 31 | Expired |
| US5200017A | Sample processing method and apparatus | Electricity | 31 | Expired |
| US6340632B1 | Method of manufacturing a semiconductor device | Electricity | 29 | Expired |
| US6607988B2 | Manufacturing method of semiconductor integrated circuit device | Electricity | 29 | Expired |
| US6326218A | Semiconductor integrated circuit and its manufacturing method | Electricity | 25 | Expired |
| US5646489A | Plasma generator with mode restricting means | Electricity | 25 | Expired |
| US5264712A | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same | Electricity | 21 | Expired |
| US5917211A | Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same | Electricity | 21 | Expired |
| US10056264B2 | Atomic layer etching of GaN and other III-V materials | Electricity | 20 | Active |
| US6555464B2 | Semiconductor device and method of manufacturing the same | Electricity | 15 | Expired |
| US5433789A | Methods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwaves | Electricity | 13 | Expired |
| US6432835B1 | Process for fabricating an integrated circuit device having a capacitor with an electrode formed at a high aspect ratio | Electricity | 12 | Expired |
| US6186153A | Plasma treatment method and manufacturing method of semiconductor device | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5822081A | Facsimile apparatus with improved network control and power supply section arrangement | Electricity | 8 | Expired |
| US6537415B2 | Apparatus for processing samples | Electricity | 8 | Expired |
| US7004181B2 | Apparatus for cleaning a substrate | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6036816A | Apparatus for processing a sample having a metal laminate | Electricity | 7 | Expired |
| US6191045A | Method of treating surface of sample | Electricity | 5 | Expired |
| US6656752B1 | Ion current density measuring method and instrument, and semiconductor device manufacturing method | Electricity | 4 | Expired |
| US5452110A | Compact facsimile apparatus with improved component arrangement | Electricity | 4 | Expired |
| US6528400B2 | Method of manufacturing a semiconductor device | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.