Tungsten doped crucible and method for preparing same
US6187089A · kind A · utility
36Cited by
7References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Feb 5, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for preparing a quartz crucible having a tungsten doped layer on the inside surface, outside surface, or both the inside surface and the outside surface is disclosed. One or more surfaces of the crucible is exposed to a vaporous tungsten source to anneal the tungsten into the crucible surface and create a tungsten doped layer which behaves similarly to a bubble free layer upon use in a crystal pulling process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.