Method of forming film on semiconductor substrate in film-forming apparatus
US6187691A · kind A · utility
511Cited by
3References
11Claims
0Family size
Assignee
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Key dates
| Filing date | May 15, 2000 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | May 15, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film is formed on a substrate in a film-forming apparatus which has upper and lower electrodes between which radio-frequency power is applied in a processing chamber, and a heater is used to heat the lower electrode on which the substrate is loaded. In one lot, at least one substrate is processed. The electrode is heated at the end of a stand-by period between lots and before starting the film-forming process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.