Heat treatment of a tantalum oxide film
US6187693A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 15, 1999 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Nov 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a tantalum oxide film having a high dielectric constant suitable for use in a high density DRAM, and a small leakage current. After forming a tantalum oxide film in amorphous state which includes moisture and impurities such as organic substances, and before crystallizing the film, the tantalum oxide film in amorphous state is subjected to a first heat treatment at a temperature which is higher than the formation temperature of the tantalum oxide film in amorphous state and which is lower than the temperature of crystallization of the tantalum oxide film in amorphous state. As a result of the first heat treatment, the moisture and the impurities such as organic substances existing in the film are surely removed from the film. Accordingly, in a subsequent heat treatment for crystallization at a high temperature, there arises no phenomenon in which crystallization of the film proceeds while impurities in the film are being removed. In other words, the crystallized tantalum oxide film obtained is free from stresses and defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.