Design level optical proximity correction methods
US6189136A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 20, 1998 |
| Grant date | Feb 13, 2001 |
| Priority date | — |
| Expiry date | Jul 20, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for integrating correction features onto selected design features of an integrated circuit mask. The method includes identifying a minimum dimension in the integrated circuit mask. The minimum dimension is configured to define transistor gate electrode features or any critical feature geometry. The method then includes removing feature geometries that are dimensionally larger than the minimum dimension. After the removing operation, correction features are integrated with selected ends of the transistor electrode features that have the minimum dimension to produce corrected transistor gate electrode features. Then, the method includes the operation of adding the corrected transistor gate electrode features to the removed feature geometries that are dimensionally larger than the minimum dimension to produce a corrected integrated circuit mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.