Subhas Bothra
90Patents
24h-index
39Co-inventors
84Inventor score
Filing activity: Dec 14, 1994 → Mar 14, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6127811A | Micro-electromechanical system and voltage shifter, method of synchronizing an electronic system and a micromechanical system of a micro-electromechanical system | Electricity | 156 | Expired |
| US5798559A | Integrated circuit structure having an air dielectric and dielectric support pillars | Emerging Cross-Sectional Technologies | 85 | Expired |
| US6143642A | Programmable semiconductor structures and methods for making the same | Electricity | 83 | Expired |
| US5854510A | Low power programmable fuse structures | Electricity | 75 | Expired |
| US5916016A | Methods and apparatus for polishing wafers | Performing Operations; Transporting | 75 | Expired |
| US6492716B1 | Seal ring structure for IC containing integrated digital/RF/analog circuits and functions | Electricity | 70 | Expired |
| US5915203A | Method for producing deep submicron interconnect vias | Electricity | 65 | Expired |
| US6323113A | Intelligent gate-level fill methods for reducing global pattern density effects | Electricity | 59 | Expired |
| US5882998A | Low power programmable fuse structures and methods for making the same | Electricity | 59 | Expired |
| US6020616A | Automated design of on-chip capacitive structures for suppressing inductive noise | Electricity | 58 | Expired |
| US5639697A | Dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5597668A | Patterned filled photo mask generation for integrated circuit manufacturing | Physics | 56 | Expired |
| US6275971A | Methods and apparatus for design rule checking | Physics | 49 | Expired |
| US6214734A | Method of using films having optimized optical properties for chemical mechanical polishing endpoint detection | Emerging Cross-Sectional Technologies | 47 | Expired |
| US6057224A | Methods for making semiconductor devices having air dielectric interconnect structures | Emerging Cross-Sectional Technologies | 46 | Expired |
| US6569757B1 | Methods for forming co-axial interconnect lines in a CMOS process for high speed applications | Emerging Cross-Sectional Technologies | 45 | Expired |
| US6281585A | Air gap dielectric in self-aligned via structures | Electricity | 43 | Expired |
| US6030885A | Hexagonal semiconductor die, semiconductor substrates, and methods of forming a semiconductor die | Electricity | 41 | Expired |
| US6545338B1 | Methods for implementing co-axial interconnect lines in a CMOS process for high speed RF and microwave applications | Electricity | 34 | Expired |
| US6189136A | Design level optical proximity correction methods | Physics | 32 | Expired |
| US5834356A | Method of making high resistive structures in salicided process semiconductor devices | Electricity | 30 | Expired |
| US6313466A | Method for determining nitrogen concentration in a film of nitrided oxide material | Electricity | 29 | Expired |
| US6387720B1 | Waveguide structures integrated with standard CMOS circuitry and methods for making the same | Physics | 28 | Expired |
| US5540958A | Method of making microscope probe tips | Physics | 25 | Expired |
| US6133635A | Process for making self-aligned conductive via structures | Electricity | 23 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.