Magnetron plasma processing apparatus
US6190495A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Jul 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The magnetron plasma processing apparatus includes a vacuum chamber in which a semiconductor wafer is accommodated. In the chamber, a pair of electrodes are provided to face each other, and the wafer is placed on one electrode. Between a pair of the electrodes, a vertical electric field is formed, and a horizontal magnetic field is formed by the dipole ring magnet to cross perpendicularly to the electric field. The magnetic field has a gradient of the magnetic field intensity such that the intensity is high on the upstream side and is low on the downstream side in the electron-drift direction. Further, the magnetic field is formed such that the intensity is made uniform over a large area including the end portion of the wafer on the upstream side in the electron-drift direction and a region right outside it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.