Silicon thin film, group of silicon single crystal grains and formation process thereof, and semiconductor device, flash memory cell and fabrication process thereof
US6190949A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 1997 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | May 21, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24372
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of forming a silicon thin film includes the steps of: irradiating a pulsed rectangular ultraviolet beam on an amorphous or polycrystalline silicon layer formed on a base body, to thereby form a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body. In this process, the moved amount of a ultraviolet beam irradiating position in a period from completion of an irradiation of the rectangular ultraviolet beam to starting of the next irradiation of the rectangular ultraviolet beam is specified at 40 .mu.m or less, and a ratio of the moved amount to a width of the rectangular ultraviolet beam measured in the movement direction thereof is in a range of 0.1 to 5%. Further, a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the <100> direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.