Method for achieving a thin film of solid material and applications of this method
US6190998A · kind A · utility
104Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1998 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Nov 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for making a thin film of solid material, including bombarding one face of a substrate of the solid material with at least one of rare gas ions and hydrogen gas ions so as to create a layer of microcavities seperating the substrate into two regions at a depth neighboring the average ion penetration depth, and heating the layer of microcavities to a temperature sufficient to bring about a separation between the two regions of the substrate. The solid material includes one of a dielectric material, a conducting material, a semi-insulating material, and an unorganized semiconducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.