Method of fabricating shallow trench isolation using high density plasma CVD
US6191004A · kind A · utility
31Cited by
2References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 16, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Feb 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a shallow trench isolation includes formation of a trench in a substrate. A high-density plasma chemical vapor deposition is performed with a plasma which does not contain argon gas. A liner oxide layer is formed on the substrate exposed in the trench. Another high-density plasma chemical vapor deposition is performed. A silicon oxide layer is formed. Then, some follow-up steps are performed to complete the shallow trench isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.