Method for producing silicon single crystal wafer and silicon single crystal wafer
US6191009A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Mar 8, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for producing a silicon single crystal wafer, a silicon single crystal ingot in which nitrogen is doped is grown by a Czochralski method, sliced to provide a silicon single crystal wafer, and then subjected to heat treatment to out-diffuse nitrogen on the surface of the wafer. According to a further method, a silicon single crystal ingot is grown in which nitrogen is doped by a Czochralski method, with controlling nitrogen concentration, oxygen concentration and cooling rate, and then the silicon single crystal ingot is sliced to provide a wafer. A silicon single crystal wafer is obtained by slicing a silicon single crystal ingot grown by a Czochralski method with doping nitrogen, wherein the depth of a denuded zone after gettering heat treatment or device fabricating heat treatment is 2 to 12 .mu.m, and the bulk micro-defect density after gettering heat treatment or device fabricating heat treatment is 1.times.10.sup.8 to 2.times.10.sup.10 number/cm.sup.3. A CZ silicon wafer is provided, wherein generation of crystal defects on the surface of the wafer, and oxygen precipitation, is accelerated in the bulk portion of the wafer. The controllable range of the depth of the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.