Method of forming node contact opening
US6191042A · kind A · utility
9Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Feb 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a node contact opening includes formation of a dielectric layer on a substrate. An opening is formed with C.sub.4 F.sub.8 /Ar/CH.sub.2 F.sub.2 as an etchant. A portion of the dielectric layer under the opening is etched with CHF.sub.3 /CO as an etchant until the substrate is exposed. A node contact opening is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.