Semiconductor device containing a diode
US6191466A · kind A · utility
11Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1999 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | Sep 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device which has few peripheral element malfunctions and superior performance is obtained. The semiconductor device includes a p-type buried layer on a main surface of a semiconductor substrate, an n-type cathode region provided on the p-type buried layer, and a p-type anode region in contact with the side surface of the n-type cathode region, the p-type buried layer being higher than the p-type anode region in acceptor content, and the p-type buried layer being in contact with the bottom surfaces of the anode and cathode regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.