Semiconductor device
US6191476A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1997 |
| Grant date | Feb 20, 2001 |
| Priority date | — |
| Expiry date | May 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.