Method for forming a capacitor having selective hemispherical grained polysilicon
US6194266A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2000 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Feb 22, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method for forming a capacitor containing selective hemispherical grained (S-HSG) polysilicon is disclosed. In this invention, dopant implantation is incorporated after the S-HSG growth to replace conventional wet clean procedure. The elimination of the cleaning treatments avoids the incidents of residue particles (due to cleaning) and minimizes numerous structure defects. The incorporation of the ion implantation technique would make up the insufficiency of doping requirement by applying in-diffusion alone. The combination of the in-diffusion and the implantation for doping procedure could maintain the device with good capacitance level even though the pre-clean procedure is excluded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.