Method for forming a self-aligned BJT emitter contact
US6194280A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 1999 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Mar 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/051
Abstract
A bipolar transistor includes a collector region, an intrinsic base region within the collector region, an extrinsic base region within the collector region, and a base link-up region within the collector region between the intrinsic base region and the extrinsic base region. An emitter region is positioned within the intrinsic base region. A base electrode overlays and is in electrical communication with a portion of the extrinsic base region and the base link-up region, and a doped inter-polysilicon dielectric layer overlays a portion of the base electrode. A capping layer is positioned above the inter-polysilicon dielectric layer; and an emitter electrode overlays the inter-polysilicon dielectric layer and the emitter region. The doped inter-polysilicon dielectric layer is the dopant source for forming the extrinsic base region and the base link-up region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.