Method of fabricating in-situ doped rough polycrystalline silicon using a single wafer reactor
US6194292A · kind A · utility
3Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1999 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Aug 20, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating in-situ doped rough polycrystalline silicon in a single process in a single wafer reactor is disclosed. The method includes substantially simultaneously flowing SiH.sub.4, PH.sub.3, and H.sub.2 in the single wafer reactor under predetermined temperature and pressure conditions and gas flow rates that result in nucleation and growth of a rugged polycrystalline silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.