Process for chemical vapor deposition layer production on a semiconductor surface with absorbing protective gasses

US6194314A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfram Karcher · Osterburken, DE
• Lutz Labs · Dresden, DE

Key dates

• Filing date: Feb 6, 1998
• Grant date: Feb 27, 2001
• Expiry date: Feb 6, 2018

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/4405
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In chemical gaseous phase deposition (CVD=Chemical Vapor Deposition), there is frequently the problem of there still being an aggressive gas in the reaction chamber from the preceding layer production process. The aggressive gas can be a remainder of a process gas used for layer production or it can be a remainder gas produced by the reaction of the process gasses. The aggressive gas can cause undesirable reactions on the surface of the semiconductor product, which damage the semiconductor product. A process for layer production on a surface includes supplying at least one protective gas to the surface before and/or during the heating of the surface to the reaction temperature. Through the use of the protective gas, on one hand the aggressive gas still remaining in the reaction chamber is thinned and on the other hand a part of the protective gas adsorbs onto the cold surface so that on the surface, preferably reactions of the aggressive gas with the protective gas occur and the surface layers themselves remain essentially undamaged.