Post chemical-mechanical planarization (CMP) cleaning composition
US6194366A · kind A · utility
56Cited by
47References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 16, 1999 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Nov 16, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning solution is provided for cleaning copper-containing microelectronic substrates, particularly for post-CMP or Via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethanolamine, gallic acid, and water. The pH of the cleaning solution is greater than 10.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.