MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance
US6194741A · kind A · utility
97Cited by
6References
5Claims
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Key dates
| Filing date | Nov 3, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Nov 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A MOSgated trench type power semiconductor device is formed in 4H silicon carbide with the low resistivity direction of the silicon carbide being the direction of current flow in the device drift region. A P type diffusion at the bottom of the U shaped grooves in N- silicon carbide helps prevent breakdown of the gate oxide at the trench bottom edges. The gate oxide may be shaped to increase its thickness at the bottom edges and has a trapezoidal or spherical curvature. The devices may be implemented as depletion mode devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.