Ferroelectric based memory devices utilizing low Curie point ferroelectrics and encapsulation
US6194751A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Jan 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400.degree. C. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. One of the contacts typically includes a platinum electrode. The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.