Semiconductor device having SOI-MOSFET
US6194763A · kind A · utility
12Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2000 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Feb 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6708
Abstract
To suppress floating substrate in the thin SOI.MOSFET formed on the SOI substrate, the gate (electrode) has a two-layer structure and the upper gate thereof is in contact with the sides of the SOI layer (substrate).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.