Chemical vapor deposition apparatus
US6197121A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Reactors for growing epitaxial layers on substrates are disclosed including rotatable substrate carriers and injectors for injecting gases into the reactor towards the substrates on the carriers and including a gas separator for separately maintaining various gases between gas inlets and the injector. Various reactor embodiments are disclosed including removable gas separators, and particular injectors which include cooling channels, as well as flow restrictors mounted within the reactors to restrict the flow of the gases to the substrates from the injector, and heaters mounted within the rotatable shell holding the substrate carriers so that the heaters can be accessed and removed through a lid forming a wall of the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.