Plasma processing apparatus and plasma processing method
US6197151A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2000 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | May 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus comprising a vacuum processing chamber, a plasma generating means including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and a evacuating means for evacuating the vacuum processing chamber, which further comprises a high frequency electric power source for applying an electric power of a VHF band from 50 MHz to 200 MHz between the pair of electrodes; and a magnetic field forming means for forming a static magnetic field or a low frequency magnetic field larger than 10 gausses and smaller than 110 gausses in a direction intersecting an electric field generated between the pair of electrodes and the vicinity by the high frequency electric power source; therein the magnetic field forming means being set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position in the opposite side of the sample table from the middle of the both electrodes; an electron cyclotron resonance region being formed between the both electrodes by the magnetic field and the electri…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.