Capacitor and memory structure and method
US6197653A · kind A · utility
19Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Mar 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
Abstract
A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free dielectric formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.