Method for manufacturing integrated structures including removing a sacrificial region
US6197655A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/053
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The method is based on the use of a silicon carbide mask for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a silicon carbide layer; defining photolithographically the silicon carbon layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.